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抗辐射双极n-p-n晶体管的研究 被引量:5

Radiation-resistant bipolar n-p-n transistor
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摘要 根据发射极周长与面积比(P/A)最小的原则,优化设计了双极n-p-n晶体管的尺寸参数,采用20V双极型工艺设计制造了三种抗辐射加固的n-p-n晶体管.测试表明,在总剂量为1kGy的辐照条件下,所制备的发射结加固型n-p-n晶体管和含有重掺杂基区环的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高10%—15%;而两种加固措施都有的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高15%—20%. Bipolar n-p-n transistor geometrical parameters are optimized based on the principle of minimizing the perimeter-to-area ratio (P/A). Three types of radiation-resistant n-p-n transistors are developed and fabricated in the 20 V bipolar process. The first is emitter-base junction hardened n-p-n transistor. The second has heavily boron doped base ring. And the last uses both radiation-resistant measurements. The experimental results indicate that after irradiated by the radiation of total dose of 1 kGy, in current gain, the common n-p-n(unhardened) transistor reduces about 60%--65% , while the first two hardened n-p-n transistors increases 10%--15% : the last hardened n-p-n transistors are 15%--20% greater than the common n-p-n transistors in current gain.
出处 《物理学报》 SCIE EI CAS CSCD 北大核心 2011年第8期773-777,共5页 Acta Physica Sinica
基金 电子薄膜与集成器件国家重点实验室创新基金(批准号:CXJJ200905)资助的课题~~
关键词 双极n-p-n晶体管 辐射效应 电流增益 抗辐射 bipolar n-p-n transistor, radiation effect, current gain, radiation-resistant
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  • 1Chen X B, Zhang Q z 2007 Theory and Design of Transistor ( Beijing: Publishing House of Electronics Industry) p276 ( inChinese). 被引量:1
  • 2Nowlin R N, Enlow E W, Schrimpf R D, Combs W E 1992 IEEE Trans. Nucl. Sci. 39 2029. 被引量:1
  • 3Fleetwood D M, Kosier S L, Nowlin R N, Schrimpf R D, Reber R A J, Delaus M, Winokur P S, Wei A, Combs W E, Pease R L 1994 IEEE Trans. Nucl. Sci. 41 1871. 被引量:1
  • 4Pease R L, Schrimpf R D, Fleetwood D M 2009 IEEE Trans. Nucl. Sci. 56 1894. 被引量:1
  • 5Wei A, Kosier S L, Schrimpf R D, Fleetwood D M, Combs W E 1994 Appl. Phys. Lett. 65 1918. 被引量:1
  • 6Chen X J, Barnaby H J, Schrimpf R D, Platteter D G, Dunham G 2006 IEEE Trans. Nucl. Sci. 53 3649. 被引量:1
  • 7Enlow E W, Pease R L, Combs W E, Schrimpf R D, Nowlin R N 1991 IEEE Trans. Nucl. Sci. 38 1342. 被引量:1
  • 8Li X J, Geng H B, Lan M J, Yang D Z, He S Y, Liu C M 2010 Chin. Phys. B 19 066103. 被引量:1
  • 9Rashkeev S N, Cirba C R, Fleetwood D M, Schrimpf R D, Witczak S C, Michez A, Pantelides S T 2002 IEEE Trans. Nuc. Sci. 49 2650. 被引量:1
  • 10Zhang H L, Lu W, Ren D Y, Guo Q, Yu X F, He C F, Ai E K, Cui S 2004 Chin. J. Semicond. 25 1675 (in Chinese). 被引量:1

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