摘要
根据发射极周长与面积比(P/A)最小的原则,优化设计了双极n-p-n晶体管的尺寸参数,采用20V双极型工艺设计制造了三种抗辐射加固的n-p-n晶体管.测试表明,在总剂量为1kGy的辐照条件下,所制备的发射结加固型n-p-n晶体管和含有重掺杂基区环的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高10%—15%;而两种加固措施都有的n-p-n晶体管,辐照后的电流增益比常规结构的n-p-n晶体管高15%—20%.
Bipolar n-p-n transistor geometrical parameters are optimized based on the principle of minimizing the perimeter-to-area ratio (P/A). Three types of radiation-resistant n-p-n transistors are developed and fabricated in the 20 V bipolar process. The first is emitter-base junction hardened n-p-n transistor. The second has heavily boron doped base ring. And the last uses both radiation-resistant measurements. The experimental results indicate that after irradiated by the radiation of total dose of 1 kGy, in current gain, the common n-p-n(unhardened) transistor reduces about 60%--65% , while the first two hardened n-p-n transistors increases 10%--15% : the last hardened n-p-n transistors are 15%--20% greater than the common n-p-n transistors in current gain.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2011年第8期773-777,共5页
Acta Physica Sinica
基金
电子薄膜与集成器件国家重点实验室创新基金(批准号:CXJJ200905)资助的课题~~
关键词
双极n-p-n晶体管
辐射效应
电流增益
抗辐射
bipolar n-p-n transistor, radiation effect, current gain, radiation-resistant