摘要
对国产先进互补双极工艺制作的双多晶自对准(DPSA)结构的NPN管进行了高、低剂量率的^(60)Co-γ源辐射实验。在总剂量辐射前后以及室温退火后,分别采用移位测试方法,研究了基极电流、集电极电流、电流增益等参数的变化规律。结果表明,DPSA NPN管比传统NPN管的抗辐射能力更强,但其低剂量率辐射损伤增强效应(ELDRS)改善不明显。最后,初步探讨了DPSA NPN管的辐射损伤机制,讨论了DPSA NPN管的抗ELDRS效应的机制。
The effects of high and low-dose-rate irradiation from ^60Co-γsource on double polysilicon self-aligned（DPSA）NPN transistors fabricated by domestic advanced complementary bipolar process were investigated.In this experiment,the shift test method was used before and after irradiation at room temperature annealing.The variation law of base current,collector current and current gain of transistors was mainly studied.The results showed that the tolerance to total irradiation dose on NPN transistors with double polysilicon self-aligned technique was superior to that of the NPN transistors with traditional processing.But the irradiation hardened ability to resist the low rate dose irradiation（known as enhanced low dose rate sensitivity（ELDRS））was not improved.Finally,the irradiation damage mechanisms of DPSA NPN transistors were investigated,and the intrinsic mechanisms of resisting the bipolar transistor＇s ELDRS effects had also been discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2018年第1期120-125,共6页
Microelectronics
基金
模拟集成电路国家重点实验室基金资助项目(0C09YJTJ1503)
国家自然科学基金联合基金资助项目(U1630141)
国家自然科学基金青年科学基金资助项目(11605283)
中科院西部之光基金资助项目(2016-QNXZ-B-7)
