摘要
依据总剂量辐射对横向PNP(LPNP)管的损伤机理,设计了一种辐射加固的次表面LPNP管。开发了通过高能离子注入工艺实现LPNP管的工艺方法,该工艺与常规双极工艺兼容。总剂量辐射试验结果表明,采用次表面LPNP管制作的LW5101线性稳压器的抗辐射能力显著提高。
A radiation hardened subsurface lateral PNP(LPNP) transistor was designed according to the damage mechanism of LPNP during total dose radiation. The manufacture process of subsurface LPNP by using high energy ion implant which was compatible with the normal bipolar process was described in detail. Total dose radiation experimental results demonstrated that the radiation resistant level of linear regulator LW5101 with this subsurface LPNP was increased markedly compared with that of conventional LPNPs.
作者
赵杰
王清波
孙有民
温富刚
ZHAO Jie;WANG Qingbo;SUN Youmin;WEN Fugang(Xi’an Microelectronic Technology Institute,Xi’an710065,P.R.China)
出处
《微电子学》
CAS
北大核心
2020年第4期593-596,共4页
Microelectronics
关键词
横向PNP管
抗辐射
高能离子注入
lateral PNP transistor
radiation hardened
high energy ion implant
