摘要
利用直流磁控溅射法,在玻璃衬底和Si片衬底上分别沉积出了Ti-Al共掺杂ZnO透明导电薄膜(TAZO),并对这两种衬底上的薄膜的应力、结构和光电性能进行了对比研究。结果表明:玻璃衬底和Si片衬底上沉积的TAZO薄膜均为具有c轴择优取向的六角纤锌矿结构多晶薄膜,Si片衬底的TAZO薄膜的导电性能优于玻璃衬底上的TAZO薄膜,53 min沉积出的两种衬底上的TAZO薄膜都具有最小电阻率,Si片衬底上薄膜的最小电阻率为5.07×10-4Ω.cm,玻璃衬底上薄膜的最小电阻率为5.48×10-4Ω.cm;玻璃衬底上的TAZO薄膜的应力小于Si片衬底上TAZO薄膜的应力。玻璃衬底上沉积TAZO薄膜样品的可见光透过率均大于90%,两种衬底上沉积TAZO薄膜的折射率都在2.0左右。
Transparent conducting Ti-Al co-doped ZnO（TAZO） films with high transparency and relatively low resistivity were successfully prepared on glass substrate and silicon substrate by direct current magnetron sputtering.The strain,structure and optical properties of TAZO films deposited on two substrates were comparatively well studied.Experimental results show that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrates along the c-axis.The electrical properties of TAZO thin films deposited on silicon are better than those on the glass substrate.When the sputtering time is 53min,the lowest resistivity of TAZO films deposited on silicon is 5.07×10^-4 Ω·cm,while the lowest resistivity on the glass is 5.48×10^-4 Ω·cm.All TAZO films present a high transmittance above 90% in the visible range.The strain of TAZO films deposited on silicon is larger than that on glass substrate.The refractive indices of TAZO films deposited on silicon and glass substrates are about 2.0.The TAZO thin films have potential applications in electronic and optoelectronic devices.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2011年第4期558-561,共4页
Journal of Optoelectronics·Laser
基金
山东省自然科学基金资助项目(ZR2009GL015)
