摘要
设计并仿真了频率范围为DC-18GHz,功率负载为20W的微波功率薄膜电阻器,根据仿真结果,采用反应磁控溅射法制备了TaN微波功率薄膜电阻器。仿真结果表明,所设计的薄膜电阻器在DC-18GHz频率范围内,电压驻波比均小于1.2,加载20W微波功率时,薄膜电阻器表面的最高温度为108℃。实验结果表明,所制备的TaN薄膜电阻器在DC-18GHz频率范围内,电压驻波比小于1.25;加载20W直流功率96小时,电阻器的阻值变化小于2%,表面最高温度为105℃;在25-125℃温度范围内电阻器的温度电阻系数为-40ppm/℃。
Microwave power thin film resistors with DC-18GHz operating frequency and 20W power load were designed and simulated by HFSS and ePhysics.According to the simulation results,the TaN microwave power thin film resistors were fabricated by reactive magnetron sputtering.The simulation results show that the VSWR of the designed thin film resistor at the frequency range of DC-18GHz is less than 1.2.The maximum surface temperature of the resistor is 108℃ when 20W microwave power is applied to the thin film resistor.The experimental results show that the VSWR of the TaN thin film resistor is less than 1.25 at the frequency range of DC-18GHz.The variation of the resistance of the TaN thin film resistor is less than 2% when 20W DC power is applied to it for 96 hours.The maximum surface temperature of the resistor is 105℃ during power load measuring;The TCR of the TaN film resistors is-40 ppm /℃ in the temperature range of 25℃-125℃.
出处
《微波学报》
CSCD
北大核心
2011年第1期74-77,共4页
Journal of Microwaves
基金
四川省支撑计划(2010GZ0156)
电子薄膜与集成器件国家重点实验室基金(KFJJ200804)
