摘要
利用 Ｘ Ｐ Ｓ 研究了 Ｒ Ｆ－ Ｐ Ｅ Ｃ Ｖ Ｄ 制备的 Ｓｎ Ｏ２ 薄膜的化学计量配比，测试了 Ｓｎ Ｏ２ 薄膜的光学和电加热特性． 结果表明：具有导电性能的 Ｓｎ Ｏ２ 薄膜是一种非理想化学计量配比的氧化物半导体薄膜材料，薄膜还具有较高的可见光透过率和较好的电加热性能．
The SnO 2 thin film was prepared by means of RF-PECVD and its stoichiometric relation is calculated by XPS. Its optical and electric heating properties are measured. The results indicate that this conducting SnO 2 thin film is a kind of non-stoichiometric n-type oxide semiconductor and SnO 2 thin film has high visible light transmittance and good electric heating properties.
出处
《暨南大学学报（自然科学与医学版）》
CAS
CSCD
1999年第5期4-7,共4页
Journal of Jinan University(Natural Science & Medicine Edition)
基金
广东省自然科学基金
国务院侨办重点学科科研基金
