摘要
研究了磁等离子体化学气相沉积的不同工艺条件对ＳｎＯ２薄膜导电性的影响．实验结果表明，外加适当位形、大小的纵向磁镜场，可使等离子体化学气相沉积技术中制备ＳｎＯ２薄膜所需的氧气流量降低，沉积时间缩短，且制得的薄膜电阻大大降低，轴向分布均匀性明显增强．对以上结果进行了分析和讨论．
The effect of magnetic plasma chemical vapor deposition (MPCVD) technology of an SnO 2 electrical thin film was studied under different conditions. The experimental results showed that it was possible to decrease the oxygen flow and shorten the depositing time, but the sheet resistance of SnO 2 thin film became low and its uniformity high, when the ratio of applied longitudinal magnetic mirror field was appropriate. All experimental results were analyzed and discussed.
出处
《华中理工大学学报》
CSCD
北大核心
1998年第A02期13-15,共3页
Journal of Huazhong University of Science and Technology
基金
国家自然科学基金
关键词
MPCVD
磁镜场
薄膜
二氧化锡薄膜
导电性
magnetic plasma chemical vapor deposition
magnetic mirror field
SnO 2 electrical film
