摘要
采用真空热蒸发技术在石英玻璃衬底上蒸镀约400 nm的铝膜,并在空气中580℃的条件下退火1 h。在退火过程中Al与石英中的SiO2反应形成纳米硅nc-Si∶（Al2O3＋SiO2）复合膜。利用X射线衍射（XRD）、拉曼散射（Raman）及扫描电镜（SEM）等方法研究了薄膜的结构特性。测得膜厚约为760 nm,估算出薄膜中纳米硅（nc-Si）的平均尺寸约为25 nm。实验发现该nc-Si∶（Al2O3＋SiO2）复合膜有热电特性,研究了其电阻率及Seebeck系数随温度（293-413 K）的变化关系,在293 K和413 K该薄膜的Seebeck系数分别约为-624μV/K和-225μV/K。
A nanocrystalline nc-Si∶（Al2O3＋SiO2） composite film had been prepared by thermal evaporation of a 400 nm thick Al film on quartz substrate and annealed in air at 580 ℃ for 1 h.During annealing processing the Al reacted with SiO2 of quartz substrate and produced nc-Si,which embedded in（Al2O3＋SiO2） film.Structural properties of the film were studied by X-ray diffraction（XRD）,Raman scattering,and scanning electron microscope（SEM）.The thickness of the nc-Si∶（Al2O3＋SiO2） composition film is about 760 nm and the average size of nc-Si is about 25 nm.It is found that the prepared film has thermoelectric property and its Seebeck coefficient is-624 μV/K at 293 K and-225 μV/K at 413 K.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第6期1465-1469,共5页
Journal of Synthetic Crystals
基金
香港何崇本新能源基金
中央高校基本科研业务费专项资金资助(GK000902052)
陕西师范大学勤助科研创新基金项目(QZYB10032)
