摘要
采用RTA方法对PECVD沉积的a-S i:H薄膜进行固相晶化是近年来发展起来的一种制备多晶硅薄膜的新方法。通过研究不同退火工艺条件对薄膜结构的影响,来揭示快速热退火机理。研究表明短波长光(≤730nm)的量子效应在晶化过程中可能起着至关重要的作用。
Using rapid thermal annealing method to crystallize amorphous silicon deposited by PECVD is a new method to obtain poly-silicon film. The effects of different annealing conditions on the structures of films were studied. The result shows the mechanism of rapid thermal annealing. It is indicated that the quantum photo-effects of short wavelength light （≤730nm） maybe dominate the crystallize processing.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2006年第5期1137-1140,1074,共5页
Journal of Synthetic Crystals
关键词
多晶硅薄膜
快速热退火
固相晶化
poly-silicon film
rapid thermal annealing
solid-phase crystallization
