摘要
回顾了近年来在Ge/Si量子点生长方面的研究进展。主要讨论了为了提高量子点空间分布有序性、增大量子点的密度、减小量子点的尺寸及改善其分布均匀性而采取的各种方法,如图形衬底辅助生长、表面原子掺杂及利用超薄SiO2层辅助生长等,以及Ge量子点的演变及组分变化。
Recent progress in the growth of the Ge/Si quantum dots is reviewed. Various approaches currently investigated to grow Ge/Si quantum dots with high uniformity, high density and small size are reviewed in detail, such as patterned substrate assisted growth, doping atoms on the surface and ultra-thin SiO2 films assisted growth. In addi- tion, the evolution and composition of the Ge dots are also well discussed.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2010年第19期117-122,共6页
Materials Reports
基金
国家自然科学基金(10964016)
云南省自然基金重点项目(2008CC012)
教育部科学技术研究重点项目
