摘要
A band edge model in （101）-biaxial strained Si on relaxed Si1-x Gex alloy,or monoclinic Si （m-Si）,is presented using the k · p perturbation method coupled with deformation potential theory. Results show that the [001], [001], [100], [100] valleys constitute the conduction band （CB） edge,which moves up in electron energy as the Ge fraction （x） increases. Furthermore,the CB splitting energy is in direct proportion to x and all the valence band （VB） edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy as x increases are found. The quantitative data from the models supply valuable references for the design of the devices.
采用结合形变势理论的k.p微扰法建立了(101)面弛豫Si1-xGex衬底上生长的双轴应变Si的带边模型.结果表明:[001],[00],[100]及[00]方向能谷构成了该应变Si的导带带边,其能量值随Ge组分的增加而增加;导带劈裂能与Ge组分成正比例线性关系;价带三个带边能级都随Ge组分的增加而增加,而且Ge组分越高价带带边劈裂能值越大;禁带宽度随着Ge组分的增加而变小.该模型可获得量化的数据,为器件研究设计提供有价值的参考.
基金
the National Ministries and Commissions of China(Nos.51308040203,9140A08060407DZ0103)~~
