摘要
用提拉法生长了Ｃｒ，Ｙｂ∶ＹＡＧ晶体，研究了在室温的吸收光谱特性以及氧化性气氛退火对其吸收特性的影响。在室温吸收光谱中存在着五大吸收带：在４４０ｎｍ和６０５ｎｍ存在着Ｃｒ３＋离子的两个吸收带，而且退火使其发生了明显的“红移”；在９３７ｎｍ和９６８ｎｍ处存在Ｙｂ３＋离子的两个吸收带，能与ＩｎＧａＡｓ激光二极管（ＬＤ）有效耦合，适合激光二极管泵浦；而且在１．０３μｍ处有一Ｃｒ４＋离子的吸收峰，可用作可饱和吸收体，从而可以实现对Ｙｂ３＋的自调Ｑ激光输出。在氧化性气氛下退火对晶体吸收特性及缺陷的影响是：退火使晶体的缺陷明显减少而且使Ｃｒ４＋浓度得到进一步的增加；Ｃｒ４＋离子浓度的增加主要是由于二价阳离子Ｃａ２＋进入相应的Ｙ３＋晶格所造成。并且从晶格场的角度讨论了退火使Ｃｒ３＋离子的吸收带发生“红移”
The Cr,Yb∶YAG single crystals were grown
by Czochralski technique.Absorption spectrum properties of Cr,Yb∶YAG crystal and the effect
of annealing on the absorption spectrum were studied;the defects of the crystal such as cores
and stress striations were studied as well.In the absorption spectra at room temperature,there
are five absorption bands:two absorption bands at 440 nm and 605 nm of Cr 3+ in the visible
region which shift to long wavelength after annealing,two absorption bands at 937 nm and
968nm of Yb 3+ respectively,which are suitable for InGaAs diode laser pumping,and an
absorption band at 1030 nm of Cr 4+ ,which is suitable for passive Q switch laser output at
1030 nm using as a saturable absorber.The effect of annealing on the absorption properties and
the defects is discussed further.The defects of the crystal are decreased and the concentration
of the Cr 4+ is increased after annealing.The increment of the concentration of the Cr 4+ is
due to compensatory Ca 2+ substituting into the sites of Y 3+ .The cause of the “red
shift”of the absorption bands of Cr 3+ is discussed in the point of crystal field.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1999年第2期140-144,共5页
Journal of Synthetic Crystals
关键词
激光晶体
YAG晶体
晶体生长
掺铬
掺钇
self Q switched alser crystal,Cr,Yb:YAG crystal,crystal pulling,spectra properties,annealing
