摘要
Ge单晶衬底上制成的化合物太阳能电池,被越来越广泛地应用于空间太阳能领域,超薄Ge抛光的机械强度也越来越受到人们的关注。介绍了一种测试超薄Ge单晶抛光片机械强度的方法。研究了加工工艺对超薄Ge单晶抛光片机械强度的影响,同时指出在太阳电池用超薄Ge单晶抛光片的加工过程中,切割、研磨、磨削、化学腐蚀、抛光等工序对超薄Ge单晶抛光片的机械强度均有着不同程度的影响。研究表明,通过调整磨削砂轮砂粒粒径、化学腐蚀去除厚度和抛光速率等工艺参数,能够有效控制超薄Ge单晶抛光片的机械强度。
Compound solar cell using polished monocrystal Ge wafers as substrate is widely used in aerospace filed,and the mechanical strength of ultrathin polished Ge wafer was received increasing attention.A method is introduced to test the mechanical strength,and the effects of sawing,lapping,grinding,etching and polishing on mechanical strength are investigated.The results show that adjusting grit diameter of grinding wheel,etching thickness and polishing rate are proved to be effective ways to improve the mechanical strength of ultrathin polished Ge wafer.
出处
《半导体技术》
CAS
CSCD
北大核心
2010年第8期768-771,786,共5页
Semiconductor Technology
关键词
机械强度
锗抛光片
太阳电池
损伤层
砂轮砂粒粒径
mechanical strength
Ge polished wafer
solar cell
damage layer
grit diameter of grinding wheel
