摘要
Ge材料具有优良的红外光学性能以及抗辐照能力,在红外光学、航天领域具有极大的应用潜力。通过对Ge单晶抛光片清洗技术进行研究,有效提高了Ge抛光片的表面质量,降低了Ge抛光片的表面颗粒度,控制了Ge抛光片的氧化层深度。研制样品的指标,Ge抛光片表面的颗粒数不超过10个(颗粒直径大于0.3μm),氧化层深度不超过2nm。目前,国内尚无Ge单晶抛光片"免清洗"的相关检验标准。将样品直接放入外延炉生长外延,得到了较好的外延结果,可以认为Ge抛光片达到了"免清洗"的要求。
With excellent infra-red optical performance and resist radiation, Ge was used in infra-red optical and space. Through researching the clean process of Ge polished wafers, the surface quality was improved effectively. The number of particles on the wafers was greatly reduced （less than 10 particles, φ 〉 0.3μm）, the thickness （ 〈 2 nm） and composition of the oxidation layer on the wafers could be controlled. The Ge polished wafers had a very perfect surface and very thinner oxide layer. Finally, the Ge polished wafers was suitable for the requirement of Epi-ready.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第4期308-310,共3页
Semiconductor Technology
关键词
锗
抛光片
清洗技术
Ge
polished wafer
clean process
