摘要
用固定能量(100 keV)不同注量(1×10^(11)-3×10^(12)cm^(-2))或固定注量(3×10^(12)cm^(-2))不同能量(50-170 keV)的质子,照射GaAs/Ge太阳电池,获得材料的光谱响应特性随质子能量和注量的变化关系。结果表明,质子辐照对材料的光学性能有破坏性的影响。这种破坏性源于质子辐照引入的大量缺陷,使品格空间的完整性受到破坏,导致少子的扩散长度降低、表面复合速度增加。在质子能量相同的条件下,电池光学性能衰降随照射注量增大;在注量相同的条件下,辐射能量越高,太阳电池光学性能衰降越大。
The paper studies spectral response of GaAs/Ge solar cells irradiated to 1.0×10^11-3.0×10^12 cm^-2 by 100 keV protons, or irradiated to 3.0× 10^12 cm^-2 by 50-170 keV protons. The results show that proton irradiation induces a great damage in optical characteristics of the solar cell, resulting from the large quantity of irradiation defects that would destroy crystal lattice integrity and reduce the diffusion distance of minority carder, and thus increase the surface recombination velocity. The damage extent of GaAs/Ge solar cell increases with proton energy and dose in their ranges under investigation.
出处
《核技术》
EI
CAS
CSCD
北大核心
2008年第1期31-34,共4页
Nuclear Techniques
基金
国家重点基础研究发展规划项目(G200551343)资助
