摘要
本研究基于蓝宝石图形衬底(PSS)制备GaN基40mil功率型LED芯片,结合版图的优化,改善了电流扩展效应,系统研究了LED器件的光电性能。制备的LED外延片波长集中在6nm范围内,半峰宽接近20nm,LED功率型芯片使用优化的版图设计,在0.01mA下有良好的点亮效果,没有暗区,器件在350mA下发光效率达104 lm/W,并能够满足3W的应用市场,此外,器件具有良好的可靠性和稳定性,350mA和700mA下老化1,000hr光衰分别为-0.4%和2.8%,并成功解决了产业化的关键技术。
40mil GaN-based light-emitting diode power chips were successfully fabricated and investigated on patterned sapphire substrates.The current spreading effect is improved by the optimized electrode design.The photoelectronic performance was analyzed systematically.The wavelength distribution of LED epitaxy wafer is within 6nm,and the Full Width Half Maximum is about 20nm.The power chip had no dark region when it was lighted at 0.01mA and showed the excellent performance by the electrode structure design.The packaged white LED lamps obtain the extraction efficiency of 104 lm/W at 350mA and can apply the for 3W/die application.The reliability of PSS LED power chips was tested under driven current of 350mA and 700mA,and the decay of the light output power is-0.4% and 2.8% after 1000hr.
出处
《现代显示》
2010年第5期196-200,共5页
Advanced Display
基金
国家高技术研究发展计划(863计划)新材料技术领域重大项目“半导体照明工程”资助,课题编号:2008AA03A184.
