摘要
利用湿法腐蚀方法,制备出图形化蓝宝石衬底(PSS)。在相同的腐蚀时间下,研究腐蚀液温度对腐蚀蓝宝石表面形貌和外延后GaN材料的影响。扫描电镜(SEM)测试结果表明:随着腐蚀液温度的增加,图形的深度增加。腐蚀后图形阵列排布整齐,所有图形都方向一致,这与蓝宝石本身晶体性质有关。腐蚀液温度对外延后GaN的影响也比较大,随着腐蚀液温度的增加,(002)半峰宽逐渐增加,光致发光谱(PL)发光强度逐渐增加。管芯结果表明,LED管芯的光强也逐渐增加。
Using wet etching sapphire substrate,patterned sapphire substrate（PSS） was prepared by wet etching sappire substrate.Under the same etching time,the influence of eorrsion solution temperature on the surface morphology of sapphire and GaN was studied.SEM indicated that as the etching temperature increasing,patterned depth increases,graphic array neatly arranged,and all graphics are in the same direction,which is related of sapphire crystal property.The influence of solution temperature on the GaN in PSS is severe.As etching temperature increases,（002） narrow half-width increases,PL emission intensity increases.The tube core results indicated that the LED illumination intensity increases.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2010年第6期1443-1445,共3页
Journal of Synthetic Crystals
基金
国家自然科学基金(No.50721002
50802053)资助项目
国家高技术研究发展计划(863)(2007AA03Z405)资助项目
教育部科技创新工程重大项目(No.707039)
