摘要
采用射频磁控溅射法在玻璃基片上制备了VO2薄膜。采用XRD、AFM和红外光谱仪研究了不同基片温度所得薄膜的结构、光学性能和相变特性。实验结果表明,薄膜的结晶程度随基片温度的增加而增加,并且VO2具有(011)择优取向。基片温度在400℃以上的VO2薄膜均出现较好的相变特性,500℃时的薄膜相变特性最佳。薄膜的红外透过率随着沉积温度的增加而逐渐增加。
The VO2 thin films were deposited on glass substrate by R.F magnetron sputtering. The crystal structure,optics properties and phase transition character of VO2 thin films obtained under different substrate temperature were analyzed by XRD,AFM and FTIR technique. The results show that with the increasing of the substrate temperature,the crystalline of the VO2 thin film is improved and the thin film has the perfectly （011） orientated. The better phase transition character of VO2 thin film was shown when the substrate temperature is over 400℃,especially at 500℃. The transmittance in infrared region of the thin films is increasing with the substrate temperature.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2010年第5期797-799,共3页
Journal of Functional Materials
