摘要
用直流磁控溅射法在玻璃基片上先沉积TiO2缓冲层,再用直流/射频反应磁控共溅射法制备掺钨VOX薄膜,然后在氮气中退火。用X射线衍射、原子力显微镜、紫外可见光分光光度计、红外光谱仪等对薄膜的结构、表面形貌、光透过率等进行测试分析。结果表明:在溅射气压为1 Pa,氧氩气体比例为1:4,Ti靶采用100 W直流电源时,所制备的TiO2缓冲层上的掺钨VOX薄膜致密,晶粒大小均匀。掺钨VOX薄膜样品的相变温度降低至35℃,可见光透过率较高,对红外光的屏蔽效果明显。
The TiO2 buffer layers were deposited on glass substrates by magnetron sputtering, next W-doped VOx thin films were deposited on them by direct current/radio frequency reactive magnetron co-sputtering, and then annealed in nitrogen atmosphere. The surface morphology, phase structure and light transmittance were investigated by atomic force microscopy, X-ray diffraction, ultraviolet visible spectrophotometer and infrared spectrometer. The results show that the prepared W-doped VOx thin film is compact with uniform grain size when the sputtering pressure is 1Pa, the ratio of oxygen to argon is 1：4, and Ti target DC power is 100W. At the same time the phase transition temperature of the sample is reduced to 35℃ with high light transmittance, and the shielding effect of infrared light is obvious.
出处
《真空》
CAS
北大核心
2011年第6期21-24,共4页
Vacuum
基金
国家"973"项目(2008CB717802)
安徽省自然科学基金(090414182
11040606M63)
安徽省高校自然科学基金(KJ2009A091)
关键词
掺钨VOx薄膜
TiO2缓冲层
直流/射频反应磁控共溅射
光透过率
W-doped VOx thin film
TiO2 buffer layer
direct current/radio frequency reactive magnetron co-sputtering
light transmittance
