摘要
通过溶胶-凝胶和真空热处理工艺在石英基底上制备了二氧化钒薄膜,对制备出的薄膜进行了X射线衍射及X射线光电子能谱分析,结果表明所制备出的薄膜价态单一,纯度较高,薄膜为多晶态,晶粒尺寸约为27 nm。利用红外热像仪拍摄了薄膜在不同温度下的红外热图并计算了发射率,结果表明二氧化钒薄膜7.5～14μm波段发射率在相变时发生突变,突变量可达0.6,具有优异的热致变发射率性能,在红外自适应伪装等领域应用前景广阔。
The VO2 thin film was prepared by inorganic sol-gel process and vacuum post-annealing treatment. The film was characterized by X-ray diffraction and X-ray photoelectron spectroscopy, and results show that the pure VO2 thin film without other valences has been prepared. The film is polycrystalline with grain size about 30 nm. The thermal images of the VO2 thin film at different temperatures were derived using thermal imager and the emissivity was calculated. It was found that 7.5- 14 um emissivity of the VO2 thin film could change abruptly by about 0.6 during the phase transition, which shows that the VO2 thin film exhibits excellent thermochromic properties and is meaningful in the adaptive infrared camouflage.
出处
《红外技术》
CSCD
北大核心
2010年第3期181-184,共4页
Infrared Technology
基金
武器装备预研基金资助项目
关键词
二氧化钒
发射率
热致变色
薄膜
红外伪装
vanadium dioxide, emissivity, thermochromic, thin film, infrared camouflage
