摘要
用磁控溅射方法制备了ＶＯ２热致变色薄膜．用Ｘ射线衍射、Ｘ射线光电子谱和原子力显微镜对薄膜的宏观及微观结构进行了分析，表明ＶＯ２薄膜纯度高、相结构单一、结晶度好．薄膜的光透过率在２０００ｎｍ处相变前后改变了４２％，高／低温电阻率变化达到三个数量级以上．薄膜的光透过谱和相变过程中电学性质变化的研究与结构分析结果相一致．
Abstract VO 2 thermochromic thin films have been deposited by using the magnetron sputtering method. Both macro, micro and electronic structures of the films have been characterized by X ray diffraction, X ray photoelectron spectroscopy and atomic force microscopy. The results show that the films have high purity, monophase and excellent polycrystallinity, which are coincident with the optical and electrical properties.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1998年第3期454-460,共7页
Acta Physica Sinica
