摘要
介绍了一种毫米波RF-MEMS单片集成反射型0/π移相器的设计、制造和测试。实测性能与设计结果吻合较好,达到的电性能指标为:在35GHz-38GHz频率范围内,电压驻波比小于1.8,参考态插入损耗为3.5±1.0dB,相移态插入损耗为2.0±0.6dB,相移为180°±6°。芯片尺寸:2.6mm×2.1mm×0.2mm。满足了插损低并具有电路拓扑的要求。
In this paper, the design,manufacture and test of a millimeter-wave reflected RF- MEMS 0/π phase shifter has been described. The test results show good agreement between design and test. Between 35GHz-38GHz frequency range, VSWR less than 1.8. The Insertion Loss is 3.5 ± 1. OdB when the phase shifter is on reference state and 2.0 ±0. 6dB when phase shift state. The phase shift is 180°±6° . The dimension of chip： 2.6mm ×2. 1mm ×0. 2mm.
出处
《微波学报》
CSCD
北大核心
2009年第5期70-74,共5页
Journal of Microwaves
基金
国家自然科学基金(60671038)
国防重点实验室基金(51491030205BQ0201)
