摘要
通过在共面波导上周期性地加载分布电容,外加驱动电压改变电容值,实现分布式MEMS移相器。首先给出了5位分布式MEMS移相器的总体结构图,分析了理论参数的设计方法。再采用HFSS建立单个微桥的三维电磁仿真模型,利用仿真得到的S参数拟合微桥的up态和down态电容值并与理论设计电容值对比,确定MEMS桥精确的结构参数。最后采用ADS建立分布式MEMS移相器整体的微波等效电路,仿真得出移相器的性能指标参数。仿真结果表明移相器在35GHz时移相精度小于0.6°,移相器的插入损耗小于0.3dB,回波损耗大于25dB。
The distributed MEMS phase shifters are achieved by periodically loading distributed capacitors on a coplanar waveguid.The capacitance of the MEMS capacitors is contolled by the driving voltage.The overall structure of the 5-bit distributed MEMS phase shifter is presented,and the design methods of theoretical parameters are analyzed.Software HFSS is applied to built and simulate the three-dimensional model of single MEMS bridge section,and simulation results of the S paraments are used to determine the precise structural parameters of MEMS bridge under the up state and down state.The microwave equivalent circuit of the phase shifter is established with software ADS.Simulation results show that the phase error and the insertion loss of the phase shifter are less than 0.6° and 0.3 dB,respectively,and its return loss is more than 25 dB at 35 GHz.
出处
《半导体光电》
CAS
CSCD
北大核心
2011年第2期204-207,275,共5页
Semiconductor Optoelectronics
基金
中国工程物理研究院科技发展基金重点课题(2008A0403016)
四川省教育厅重大培育项目(07ZZ038)
西南科技大学研究生教改项目(2007XJJG33)
教育部访问学者基金项目
