摘要
采用TSMC0.6μm1P3M标准CMOS工艺设计了一种检测O2浓度的SnO2气体微传感器。传感器材料是由实验分析及CMOS工艺共同确定,其多晶硅加热电阻温度系数小、功耗低,而SnO2敏感薄膜灵敏度高且稳定性良好,通过软件对器件进行热学模拟仿真并确定了传感器的结构及设计参数。芯片测试结果表明:所设计的MHP悬空结构的传感器反应速度快、抗干扰能力强、具有较高的灵敏度及稳定性,检测O2含量的浓度范围为15%～70%,满足了工艺要求。
A SnO2 gas microsensor for measuring oxygen concentration was presented based on TSMC 0.6 tan 1P3M CMOS process. The poly-Si resistor of the sensor has small temperature coefficient and low power, and the sensitive material SnO2 owns high sensitivity and good stability by experiment analysis. ANSYS was used to simulate temperature characteristic. The final structure and design parameters of the sensor were determined. Measurement results show that the MHP sensor has quick response speed, good stability and great quality of resisting disturb. The measurement range varies from 15 % to 70%, which meet process requirement.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第7期715-718,共4页
Semiconductor Technology
