摘要
基于0.18μm CMOS工艺,设计出一个适用于class1蓝牙系统的高效率的差分E类功率放大器.驱动级采用自偏置Cascode结构,输入和级间匹配均片内完成,实现高集成度.在电源电压1.8V,温度60℃,输入信号0dBm条件下,仿真结果表明,该系统具有最大输出功率24.1dBm,PAE为57.9%,二次谐波分量为-40.05dBm,输出电压驻波比小于6∶1.采用间接闭环控制环路控制输出级的电源电压,实现了输出功率的步进为2dBm控制.整个系统最终实现低成本、高集成度.
This paper descrihes the design of a CMOS differential class - E RF power amplifier for Bluetooth applications in a standard 0.18/2m CMOS technology. The input and interstate matching network are implemented on chip. Simulation results using Advanced Design System （ADS） show that the power amplifier can deliver 24. ldBm output power at 2.45GHz with 57.9 % power - added - efficiency respectively under a single supply voltage of 1.8 V and input power of 0dBm, The second harmonic is - 40.05 dl3m and the output load VSWR less than 6 ： 1. The level of output power can be controlled in 2 dBm steps using a indirect closed control loop.
出处
《微电子学与计算机》
CSCD
北大核心
2009年第6期202-205,共4页
Microelectronics & Computer
基金
国家自然基金项目(10871221)
