摘要
描述了一种采用化学方法的分辨率增强技术制作深亚微米T型栅的技术。该技术采用DUV投影光刻机和化学放大正性光刻胶(CAR)以及分辨率增强技术,在完成源漏制作等工艺的严重不平坦的GaAs衬底上,采用0.25μm设计的光刻版制作出0.18μmT型栅,突破了采用常规光学光刻时栅长的制作限制。介绍了GaAs器件在栅光刻时遇到的困难,描述了工艺制作过程,并讨论了该工艺技术中每步工艺的思路和采用的工艺原理。通过在6～18GHz GaAsP HEMT功率放大器制作中的应用,提高了器件性能及成品率,并给出了测试结果以及0.18μmT型栅的电镜图片。
The method to fabricate the T-shape gate with a very narrow gate length was described. During the lithography process, the chemical shrink technology （a resolution enhanced technology）, DUV stepper and chemical amplified resist （CAR） were used. The surface of the GaAs substrate becomes unflatness and makes the exposure very difficult in the gate printing because of the complicated structures in GaAs devices such as the source, drain and N; recess. This unflateness limits the successful translation of the gate pattern from the photo mask to the substrate. The difficulty was overcome and a 0.18μm T-shaped gate was fabricated by using 0. 25 μm photo mask. Every step of the gate lithography process was discussed. A 6 - 18 GHz GaAs PHEMT MMIC amplifier was fabricated by using this method. The device performance and its yield were improved. The test results and the cross-section photo of a 0. 180μm T-shaped gate were given.
出处
《微纳电子技术》
CAS
北大核心
2009年第5期311-313,318,共4页
Micronanoelectronic Technology
