摘要
在Ferguson的负性化学放大胶(CAR)后烘反应动力学模型基础上,增加了后烘过程中光致酸扩散模型,通过后烘模型的简化,得到了简化的后烘反应扩散动力学模型。将模拟图形与Ferguson的实验图形进行了比较,结果显示,简化的后烘反应扩散动力学模型比单纯的后烘反应动力学模型更准确,且程序运行占用的电脑资源更少。另外,通过不同曝光时间下的显影过程模拟,清晰地反映了光刻胶显影的过程,其结果与实际相符,对实际光刻工艺有较好的参考意义。
A diffusion model for photogenerated acid is added to a reaction kinetic model for post-exposure bake （PEB）of negative chemically amplified resist （CAR） introduced by R. A. Ferguson. This combined model generates the simplified reaction and diffusion kinetic model for the chemically amplified resist. Simulation results based on the simplified reaction and diffusion kinetic model are compared with the experimental results by R. A. Ferguson. It has been shown that the model proposed in the paper is more accurate than the reaction kinetic model. Moreover, programs from this model require less CPU time and memory. Simulations of resist development for different exposure dosages are also discussed, which explicitly show the evolution of resist development.
出处
《微电子学》
CAS
CSCD
北大核心
2005年第6期568-571,576,共5页
Microelectronics
基金
国家杰出青年科学基金资助课题(50325519)
关键词
光刻模拟
负性化学放大胶
后烘模型
Lithography simulation, Negative chemically amplified resist, Post-exposure bake model
