摘要
MOCVD growth and characterization of GaSb rich and InAs rich GaInAsSb on GaSb substrates were investigated. The surface of InAs rich GaInAsSb epilayer was different from GaSb rich film. The flux of TMSb in vapor phase might be the cause of the different surface features between GaSb rich and InAs rich epilayers. The n type conduction of InAs rich GaInAsSb was also different from GaSb rich samples. The p type conduction is often attributed to native lattice defect or carbon impurity on group Ⅴ sites. Carbon might occupies group Ⅲ sites as donor in InAs rich GaInAsSb film. The strength of the chemical bonding between carbon and group Ⅲ or group Ⅴ elements had much to do with the carbon impurity site preference, resulting in the two type conductions of GaInAsSb film grown by MOCVD.
MOCVD growth and characterization of GaSb rich and InAs rich GaInAsSb on GaSb substrates were investigated. The surface of InAs rich GaInAsSb epilayer was different from GaSb rich film. The flux of TMSb in vapor phase might be the cause of the different surface features between GaSb rich and InAs rich epilayers. The n type conduction of InAs rich GaInAsSb was also different from GaSb rich samples. The p type conduction is often attributed to native lattice defect or carbon impurity on group Ⅴ sites. Carbon might occupies group Ⅲ sites as donor in InAs rich GaInAsSb film. The strength of the chemical bonding between carbon and group Ⅲ or group Ⅴ elements had much to do with the carbon impurity site preference, resulting in the two type conductions of GaInAsSb film grown by MOCVD.
