摘要
半导体超晶格由于其特殊的结构,产生了许多新的量子现象.以GaAs/AlAs结构为例,运用薛定谔方程,结合边界条件,对量子阱现象进行了浅析,求得阱中的二维电子气在沿材料生长方向上的能级是分立的,即量子阱中由于局域效应存在着一系列的子能级,且从电子的能态密度的定义出发,计算出其二维电子的能态密度与能级无关.
Because of the especial structure of semi-conductor superlattice material,it comesinto being a lot of new quantum phenomena.It was analyzed simply the phenomena of quantum well taking the structure of GaAs/AlAs semi-conductor superlattic as an example.Managing Schro.. dinger equation and considering the condition of boundary in well,calculated results show that energy levers of two-dimension electron gas are detached along the direction of the material's growth,in an other word,there are series of sub-energy levers in quantum well because of the effect of limited-field.Further more,it was figured out that the energy states's density of two-dimension electron are independent of energy level in well basing on the definition of energy state's density of electron.
出处
《云南大学学报（自然科学版）》
CAS
CSCD
北大核心
2007年第S1期151-154,共4页
Journal of Yunnan University(Natural Sciences Edition)
基金
2003年度云南大学理(工)科校级科研基金资助项目
关键词
半导体超晶格
量子阱
能态密度
semi-conductor superlattice
quantum well
density of energy states.
