摘要
用PL谱测试研究了半导体量子点的光致发光性能,分析了不同In组分覆盖层对分子束外延生长的量子点发光特性的影响,及导致发光峰红移的原因。结果显示,In元素有效抑制界面组分的混杂,使得量子点的均匀性得到改善,PL谱半高宽变窄。用InAs覆盖的In0.5Ga0.5As/GaAs自组织量子点实现了1.3μm发光。
Semiconductor quantum dot photoluminescence performance was studied by PL spectrum test. The influence of different In component overburden layer on the illumination property of quantum dot grown by MBE and the reason of illumination peak red-shift were analyzed. The results show that In element suppresses the promiscuous component effectively, so the quantum dot uniformity is improved, and the half high width of PL spectrum is narrowed. It reveals that Ino.5 Ga0.5 As/GaAs organization quantum clots covered with InAs realize 1.3 um illumination.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第10期895-898,共4页
Semiconductor Technology
关键词
量子点
发光性质
光致发光谱测试
quantum dot
illumination property
PL spectrum test
