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量子点CdS与纳米TiO2复合物对HL60存活率的影响 被引量:8

The effect of QDs-CdS and TiO_2 composites on survival ratios of HL60 cells
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摘要 采用自组装的方法制备了纳米QDs-CdS/TiO2复合物,并将其以及TiO2用于HL60白血病细胞的光动力实验。在可见光区以5种波长光(412 nm、432 nm、462 nm、511 nm、583 nm)及不同的光能流密度辐照后,用CCK-8法测量光密度OD值。实验结果表明TiO2灭活HL60的PDT效率在5种波长光辐照下都比较低,对应于412 nm、432 nm、462 nm、511 nm、583 nm灭活效率分别为:68.3%、66.5%、65.9%、64.7%、64.1%。在同等实验条件下QDs-CdS/TiO2对HL60的灭活效应要明显高于TiO2,在412 nm处QDs-CdS/TiO2对HL60细胞灭活效率最高达86.5%。 The QDs-CdS/TiO2 composites were prepared by self-assembly method, and then were used in the PDT experiment of HL60 cells with TiO2. After radiation of five kinds wavelength visible lights(412 nm,432 nm,462 nm,511 nm,583 nm) with different luminous energy density,OD(optical density) values were measured by CCK-8. The experiment results showed that the PDT efficiency of TiO2 on destruction of HL60 cells was low. Corresponding to the five different lights:412 nm,432 nm,462 nm,511 nm,583 nm,the efficiency respectively was:68.3% ,66.5% ,65.9% ,64.7% ,64.1%. The efficiency of QDs-CdS/TiO2 on destruction of HL60 cells was higher than the efficiency of TiO2 under same conditions. The inactivated efficiency of QDs-CdS/TiO2 on HL60 cells reached 86.5% under the radiation of 412 nm light.
出处 《光电子.激光》 EI CAS CSCD 北大核心 2008年第3期423-426,共4页 Journal of Optoelectronics·Laser
基金 广东省自然科学基金资助项目(7005845)
关键词 量子点 QDs-CdS/TiO2 光动力疗法 红移 Quantum dot(QD) QDs-CdS/TiO2 Photodynamic therapy(PDT) red-shifted
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  • 1郝彦忠,蔡春立.纳米结构TiO_2/聚3-己基噻吩多孔膜电极光电性能研究[J].物理化学学报,2005,21(12):1395-1398. 被引量:9
  • 2熊建文,陈丽,刘明胜,刘桂香,戴维萍,肖化,张镇西.基于形态学特征的细胞活性无损检测新方法研究[J].光电子.激光,2005,16(12):1514-1519. 被引量:4
  • 3熊建文,刘桂香,陈丽,张镇西,肖化.基于圆孔衍射识别细胞活性状态的方法研究[J].激光生物学报,2005,14(6):447-450. 被引量:6
  • 4ZHAOCui-lan XIAOJing-lin.Properties of Weak—coupling polaron in cylindrical quantum dot[J].光电子.激光,2004,15(5):126-128. 被引量:2
  • 5Maxim A Makeev, Anupam Madhukar. Simulations of atomic level stresses in systems of buried Ge/Si islands[J]. Phys Review Lett,2001 ,86(24) :5542-5545. 被引量:1
  • 6YU Wen-bin, Madhukar Anupam. Molecular dynamics study of coherent energetics, stresses, and strains in highly strained epitaxy[J]. Phys Review Lett, 1997,79( 5 ) ; 905-908. 被引量:1
  • 7Raiteri P,Leo Miglio. Strain maps at the atomic scale below Ge pyramids and domes on a Si substrate[J]. Applied Phys Lett , 2002,80(2) ; 3736-3739. 被引量:1
  • 8Andreev A D, Reilly E P O. Theory of the electronic structures of GaN/AIN hexagonal quantum dots[J]. Phys Review B, 2000,62(23) : 15851-16870. 被引量:1
  • 9LIU Yu-min, YU Zhong-yuan, YANG Hong-bo, et al. Investigation of the elastic strain field distribution of self-organized growth lensed-shaped quantum dot by finite element method[J]. Chinese Journal of Semiconductor, 2005,26(7) :1317-1322. 被引量:1
  • 10Seungwon LEE,Olga L Lazarenkova, et al. Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots[J]. Phys Review B, 2004,70(12) :1253071-1253077. 被引量:1

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