摘要
与常规体硅器件相比,SOI器件由于其独特的结构,常常会产生较严重的自加热效应,影响器件的可靠性。文中阐述SOILDMOS功率晶体管中的自加热现象,研究了自加热效应产生的机理,在不同的结构和工艺参数下自加热效应的研究进展,以及减弱自加热效应的方法。研究证明采用新材料,结构可对同加热效应起到有效抑制作用提高了件的可靠性。
Compared with the devices built on bulk silicon, SOI power devices can produce serious self-heating effect because of their different structure. An overview of the self-heating phenomena in SOI LDMOS transistors is provided in this paper. The heat generation mechanisms and the research on self-heating at different structure and technological parameters are analyzed, and some methods for reducing the self-heating effect are presented.
出处
《电子科技》
2009年第4期72-74,共3页
Electronic Science and Technology
