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SOI-纳米技术时代的高端硅基材料 被引量:8

SOI—Advanced Silicon-Based Materials for Nanotechnology Era
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摘要 绝缘体上硅(SOI)是纳米技术时代的高端硅基材料。详细介绍了SOI在半导体技术领域中的应用,以及近年来为满足SOI的特殊应用要求研发的多种SOI新材料及其制备技术;综述了绝缘体上应变硅(sSOI),绝缘体上锗(GOI)等SOI技术的现状和发展动向;最后,对SOI技术的发展前景进行了展望。 Sihcon-On-Insulator (SOD is an advanced silicon-based material for Nanotechnology Era. Applications of SOl in microelectronics are described in detail. A variety of novel SOI materials for specific applications is examined, along with their fabrication technologies. The state-of-the-art of SOI technology, including strained silicon-on- insulator (sSOI) and germanium-on-insulator (GOI), is reviewed. And finally, the development trend and future prospect of SOI technologies are discussed.
作者 林成鲁
出处 《微电子学》 CAS CSCD 北大核心 2008年第1期44-49,共6页 Microelectronics
关键词 高端硅基材料 绝缘体上硅 绝缘体上应变硅 绝缘体上锗 Advanced silicon-based material Silicon on insulator (SOI) Strained silicon on insulator(sSOI)
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  • 1MAZURE, AUBERTON-HERVE A J. Engineering wafers for the nanotechnology era [C] // Proc 35th Euro Sol Sta Dev Res. Grenoble, France. 2005. 被引量:1
  • 2COLINGE J P. Silicon-on-insulator technology: materials to VLSI [M]. 3^rd Ed. Bostion, MA, USA: Kluwer Academic Pub. 2004. 被引量:1
  • 3CELLER G K, CRISTOLOVEANU S. Frontiers of silicon-on-insulator [J]. J Appl Phys, 2003, 93(9): 4955-4978. 被引量:1
  • 4JOSHI R V, A low power and high performance SOI SRAM circuit design with improved cell stability[C] //Proc 2006 IEEE Int SOI Conf. Niagara Falls, New York, USA. 2006: 3-4. 被引量:1
  • 5FISCH D. Innovative approach to drive floating body Z-RAM embedded memory to 32 nm and beyond[C]// Proc 2007 IEEE Int SOI Conf. Indian Wells, CA, USA. 2007: 101-102. 被引量:1
  • 6BRUINES J. Process outlook for analog and RF applications [J]. Microelectronic Engineering, 2000, 54 (1) : 35-48. 被引量:1
  • 7YAN R H, OU ZD A, LEE K F. Scaling the Si MOSFET.. from bulk to SOI to bulk [J]. IEEE Trans Elec Dev, 1992, 39(7) 5 1704. 被引量:1
  • 8THEAN A V Y, White T, Sadaka M, et al. Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology [C] // Proe IEEE Symp VLSI Tech. 2005: 134-135. 被引量:1
  • 9BRENNAN S. 19 Electronics industry leaders ioin forces to accelerate SOI innovation into broad markets [EB/OL]. www. soieonsortium, org. 被引量:1

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