摘要
用玻璃作衬底在不同温度下用PECVD法直接沉积非晶硅(a-Si:H)薄膜,在400℃和500℃分别光退火5min、10min、20min、30min、40min、60min、120min,用拉曼光谱分析前后样品,发现随着晶化时间的延长晶化效果越好,500℃退火的薄膜比400℃的晶化效果好。
Amorphous silicon films prepared by PECVD on glass substrate is crystallized by pulsed rapid thermal annealing at 400℃ and 500℃ for 5min, 10min, 20min, 30min, 40min, 60min, 120min. Using micro-Raman scattering, it can be seen that the crystallization effect is better with longer annealing time, and the films has better crystallization at 500℃ than those crystallized at 400℃.
