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Sol-Gel提拉法制备ZAO薄膜及其光电性能 被引量:3

Preparation and Properties of Sol-Gel ZAO Thin Films
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摘要 采用溶胶-凝胶(Sol-Gel)浸渍提拉法(基于组装的小型提拉装置)在普通玻璃片上制备出ZnO∶Al(ZAO)薄膜,利用扫描电子显微镜、紫外-可见分光光度计、数字式四探针测试仪等检测手段分别对其进行了分析比较.结果表明:Al3+浓度为1.0%的ZAO薄膜表面最为致密均匀;随着退火温度的提高,薄膜的晶体平均粒径明显增大,电阻率逐渐减小;不同掺Al量的ZAO薄膜在可见光区的平均透光率均在70%以上,当A l3+浓度为1.5%时,550℃退火2 h,电阻率最小,为5.9×10-2Ω.cm. ZnO:Al(ZAO) thin films were respectively prepared on glass substrates by Sol-Gel dip-coating method by an assembled diminutive device, scanning electron microscopy( SEM), UV-visible speetrophotometry (UV-vis), digital four-point probe electrical resistance measurement were used to characterize their surface morphologies, transmission property, film thickness, electrical resistance etc. The results indicate that the morphology of the ZAO thin films are more compact when Al^3+ doping concentration is 1% ; with increasing annealing temperature, the average grain size of the film is increased, and the electrical resistivity is decreased. Average optical transmittance of the film exceeds 70% in the visible region, and electrical resistivity is as low as 5.9×10^-2Ω·cm under Al^3+ doping concentration of 1.5% at 550℃annealing for 2 h.
出处 《大连交通大学学报》 CAS 2009年第1期25-29,共5页 Journal of Dalian Jiaotong University
关键词 SOL-GEL 提拉法 ZAO薄膜 电阻率 透光率 Sol- Gel dip-coating ZnO thin film electrical resistivity optical transmittance
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