摘要
采用直流磁控溅射技术,在玻璃衬底上制备了ZnO:Al(ZAO)薄膜样品。其他参数不变,在不同的温度下对样品进行了退火处理,研究了薄膜的结构性质、电学和光学性质随退火温度的变化关系。实验结果表明:在退火温度为200℃时,ZAO薄膜具有较优的光电性能,其电阻率为9.62×10-5.cm,可见光区平均透射率为89.2%。
The ZnO：Al（ZAO） films were deposited on glass substrates by using a DC reactive magnetron sputtering system.With the other parameters unchanged,the structural,electrical and optical properties of ZAO films were studied at the different annealing temperatures.The experimental results show that at the annealing temperature of 200 ℃ the ZAO thin film has better optical properties,the resistivity is 9.62×10-5 Ω·cm and the transmissivity in visible region is 89.2%.
出处
《湖南工业大学学报》
2011年第5期22-25,28,共5页
Journal of Hunan University of Technology
基金
湖南省教育厅科研基金资助项目(09C321)
关键词
ZAO薄膜
退火温度
电学性能
光学性能
ZAO films
annealing temperature
electrical properties
optical properties
