摘要
本实验采用PECVD方法在不同透明导电薄膜上沉积了p型掺杂(p-Si:H)膜。用拉曼(Raman)光谱测试了p-Si:H膜的晶化率,并用扫描电子显微镜(SEM)观察了其形貌。结果表明:在SnO2上沉积的p-Si:H膜的晶化率较其它两种衬底高,相应的SEM形貌显示颗粒尺寸也较大。通过I-V测试仪测试了ZnO:Al/p-Si:H、SnO2/p-Si:H和SnO2/ZnO:Al/p-Si:H的接触特性,结果显示ZnO:Al/p-Si:H的接触特性并不比SnO2/p-Si:H差。
p-Si：H films were deposited on different transparent conductive films by PECVD in this paper. Crystalline volume fraction of p-Si ： H films were tested by Raman spectra instrument and the morphology of p-Si ： H films were observed by SEM. It was shown that the crystalline volume fraction of p-Si ： H films on SnO2 is higher than those on ZnO ： Al and SnO2/ZnO ： Al , and the cluster size of p-Si ： H films on SnO2 is also larger. Contact characteristics of ZnO ： Al/p-Si ： H, SnO2/p-Si ： H and SnO2/ZnO ： Al/p-Si ： H were tested by Ⅰ-Ⅴ testing instrument. It was shown that contact characteristics of SnO2/p-Si ： H is not superior to ZnO ： Al/p-Si ： H and SnO2/ZnO ： Al/p-Si ： H.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2007年第1期42-46,共5页
Journal of Synthetic Crystals
关键词
透明导电膜
p-Si:H膜
Ⅰ-Ⅴ测试
电接触特性
晶化率
transparent conductive films
p-Si ： H films
Ⅰ-Ⅴ testing
contact characteristics
crystalline volume fraction
