摘要
利用脉冲激光沉积法在不同电阻率的n型Si(100)基片上沉积Cu2ZnSnS4薄膜,制备p-Cu2ZnSnS4/n-Si异质结。利用X射线衍射(XRD)、X射线能谱(EDS)和原子力显微镜(AFM)对Cu2ZnSnS4薄膜的结构、组分和形貌进行表征,并对器件进行Ⅰ-Ⅴ测试,讨论不同电阻率的Si对异质结器件光电特性的影响。结果表明,器件有良好的整流特性,Si电阻率大的器件光电响应比较好,而Si电阻率小的器件光伏效应比较明显。
Cu2ZnSnS4 thin films were deposited on n-Si （100） substrates with different resistivities by pulsed laser deposition, and the p-Cu2ZnSnS4/n-Si heterojunetions were fabricated. The structure, composition and morphology of Cu2ZnSnS4 films were characterized by X-ray diffraction, energy dispersive spectrometry and atomic force microscopy. I-V characteristics of the devices show that the different resistivities of silicon substrates have a significant influence on the device performance. The devices have good rectifying characteristics, and the device with high resistivity of Si has more significant photoelectric response ,while the device with low resistivity of Si has more obvious photovoltaic effect.
出处
《真空》
CAS
2012年第5期45-48,共4页
Vacuum
基金
国家自然科学基金资助项目(51072043)
