摘要
在俄歇电子能谱仪超高真空室内,采用离子束溅射沉积方法在多晶Cu上沉积了铀薄膜,采用俄歇电子能谱技术(AES)研究铀薄膜的生长方式,铀、铜的相互作用及退火引起U膜成分结构变化。沉积初期观察到铀与铜发生相互作用,随着铀薄膜厚度的增加,UOPV/CuLMM俄歇跃迁峰强度值变化说明铀薄膜为层状+岛状生长。退火促进了界面扩散,随着温度的升高,铀与铜发生了相互作用和扩散,温度继续升高,铀与碳形成了铀碳化物。
The uranium films were deposited by ion beam sputtering deposition on polycrystalline copper substrates. The surface characteristics and stoichiometry of the uranium thin films grown at various stages after in-situ annealing were characterized with Auger electron spectroscopy （AES）. The results show that uranium reacts with copper substrates at the initial stage of film growth, and that as the uranium film grows, the UOPV/CuLMM peak of Auger electron intensity-characteristic of an layer to island, Volmer-Weber（VW） growth mode can be observed.Annealing significantly promotes diffusion at the U/Cu interface; and as the annealing temperature increases, uranium and copper react and inter-diffuse until uranium carbide forms at a critical annealing temperature.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2009年第2期135-138,共4页
Chinese Journal of Vacuum Science and Technology
