摘要
采用等离子体增强化学气相沉积(PECVD)技术,在一定射频功率、衬底温度和气压下,在普通玻璃衬底上制备了不同硅烷体积分数的Si薄膜材料。使用喇曼光谱对薄膜材料的结构进行了研究。结果表明,随着硅烷体积分数的降低,Si薄膜沉积速率将会逐渐降低。当硅烷体积分数降到2%时,喇曼光谱检测到出现对应的晶体Si的吸收峰,而最初的非晶吸收峰位逐渐减弱,Si薄膜的结构实现了由非晶向微晶转变。随着硅烷体积分数进一步降低,结晶率不断提高,微晶比例进一步扩大。
Si thin films with different silane volume fraction were deposited on common glass substrates under the condition of given discharge power, substrate temperature and pressure by PECVD. Raman spectra were used for studying the structure of Si thin films. The results show that the deposition rate of Si thin films would decrease gradually with the decrease of φ （silane volume fraction）. When φ decreases to 2%, the absorption peak of crystal Si is detected by Raman spectra and the initial absorption peak of amorphous is gradually weakened. The structure of the Si thin films changes gradually from amorphous to microcrystalline. With the further decreasing of φ, crystallization ratio increases continuously and the ratio of microcrystalline can be further enlarged.
出处
《半导体技术》
CAS
CSCD
北大核心
2009年第2期158-160,共3页
Semiconductor Technology
