摘要
利用等离子体化学气相沉积技术制备纳米硅(nc-Si∶H)薄膜材料,并用X射线衍射仪(XRD)、原子力显微镜(AFM)、Raman光谱仪对成膜的状态进行了表征。用红外吸收光谱仪对不同工艺薄膜的结构进行了分析,研究了偏压对薄膜结构的影响,为纳米硅薄膜在光电子方面的应用提供可靠的依据。
ncSi∶H films are prepared with plasma enhanced chemical vapor deposition (PECVD),and the states of the films are measured respectively by XRD,AFM,Raman spectrometer,which are Xray diffraction pattern,micrograph,Raman spectrum.Moreover,the structures of the films prepared with different processes are analyzed,and studied that bias voltage influences in the structure.The results supply the application of ncSi∶H in photoelectron field with reliable basis.
出处
《西北大学学报（自然科学版）》
CAS
CSCD
北大核心
2002年第5期477-479,482,共4页
Journal of Northwest University（Natural Science Edition）
基金
陕西省教委专项科研基金资助项目(95JK069)
