摘要
采用射频（RF）磁控溅射方法在玻璃衬底上制备了氢化纳米硅薄膜,研究了沉积压力（4-9 Pa）对薄膜结构和性能的影响。利用XRD、SEM、紫外-可见光分光光度计、傅立叶红外吸收光谱仪（FT-IR）及四探针电阻测试仪等对薄膜结构和性能进行了表征。结果表明：随着沉积压力的提高,薄膜结晶程度逐渐变差,晶粒尺寸降低;薄膜光学带隙在2.04-2.3 eV之间,且随着沉积压力的提高而增加;薄膜具有SiH、SiO、SiH2和SiH3振动吸收峰,随着沉积压力的增加,SiH、SiH2振动吸收峰向高波数移动,薄膜方块电阻在132-96Ω/□,且随着沉积压力的升高而降低。
nc-Si： H thin films were prepared on glass by RF magnetron sputtering technique. Effects of deposition pressure on structure and properties of thin film were investigated using XRD, SEM, UV-Vis spectrometer and FT-IR four-probe resistivity meter. XRD and SEM results show an improvement of the crystallinity and grain size of the films with decreasing deposition pressure and the optical band gap of the films ranged from 2.3 eV to 2.04 eV as the depositon pressure was increased ; FT-IR measurement shows that SiH,SiO,SiH2 and SiH3 vibrational absorption peak occurred in the films and SiH,SiH2 absorption peak moved to higher wavenumber along with higher pressure; square resistivity was decreased （132-96Ω/□） when depositon pressure enhanced.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2009年第3期556-560,共5页
Journal of Synthetic Crystals
基金
国家自然科学基金重大资助项目(No.90407023)
关键词
氢化纳米硅
磁控溅射
沉积压力
光学带隙
nc-Si： H
meganetron sputtering
deposition pressure
optical bandgap
