摘要
本文对全息光栅掩模制备中光刻胶薄膜的应力与厚度均匀性问题进行了研究。应用干涉法及Stoney公式计算的分析结果,对SiO2基底上光刻胶薄膜的应力进行了研究。对膜厚的均匀性采用干涉显微镜在同一样品,不同直径上多点测量的方法,初步得出光刻胶薄膜膜厚均匀性的分布规律。分组变换加速度,转速,匀胶时间等参数,并对结果进行比较,发现在匀胶转速相同的前提下,光刻胶薄膜应力值随加速度的降低面减小,光刻胶薄膜的均匀性随加速度的增加而变好。在3000rpm至4000rpm的低转速时,光刻胶薄膜样品的膜厚均匀性好。出此,在全息光栅匀胶工艺中,要选择适当的转速的加速度,以得到应力较小和均匀性较好的光刻胶薄膜。与此同时,薄膜膜厚均匀性呈现出中间薄,边缘较厚的规律。
This article investigate the problem of how to control the characteristic of photoresist layer during the manufacturing process of the holographic grating mask. Making use of interference method and the calculated result of Stoney formula, the stress of photoresist thin film spinned on the SiOe substrate was studied. Meanwhile, the uniformity of film thickness was studied by microscope. Varying acceleration, rotating speed and spinning time, spinning experiment was done. The results shows that the residual stress of.photoresist thin film decrease, while the uniformity of thin film thickness get to the bad, with the reducing of acceleration at the same rotational speed. So choosing the parameters of spinning rightly during the manufacturing process of the holographic grating mask is indisoensable.
出处
《激光杂志》
CAS
CSCD
北大核心
2008年第6期55-56,共2页
Laser Journal
基金
上海市科委课题上海市重点实验室登山计划"亚波长光栅防伪技术原理及关键技术研究"(编号06DZ22016)
上海市科委课题(编号07DZ22026)"纳米尺度亚光波长结构材料成像与衍射特性研究平台建设"
上海市教委课题(编号06EZ011)"全息离子束刻蚀技术研究"项目资助
