摘要
采用IBM 0.35μm SiGe BiCMOS工艺设计了一种应用于5 GHz无线局域网的射频功率放大器。功率放大器工作在A类状态,由两级共发射极放大电路组成,并利用自适应偏置技术改善了功放的线性度。输入输出和级间匹配网络都采用片内元件实现。在3.3 V的电源电压下,模拟得到的功率增益为32.7 dB;1 dB压缩点输出功率为25.7 dBm;最大功率附加效率(PAE)为15%。
A design of RF power amplifier for 5 GHz wireless local area network （WLAN） systems is presented in IBM 0. 35 μm SiGe BiCMOS technology. The power amplifier works in class-A type. It is implemented in two common-emitter stages with adaptive bias circuit which is used to improve linearity. Input, output and inter-stage matching networks utilize on-chip passive components. With a supply voltage of 3. 3 V, its power gain is 32. 7 dB, P1-dB is 25. 7 dBm, the maximum Power Added Efficiency （PAE） is 15%.
出处
《电子器件》
CAS
2008年第6期1761-1764,1768,共5页
Chinese Journal of Electron Devices
