摘要
设计了一款应用于有源相控阵雷达T/R组件的X波段功率放大器,放大器采用单端两级放大的共源共栅结构,包括输入与输出匹配网络,偏置电路采用自适应线性化技术,实现高增益和高线性的输出。基于IBM 0.18μm Si Ge Bi CMOS 7WL工艺流片,测试结果表明,在3.3 V电源电压下,在8.5 GHz时增益为21.8 d B,1 d B压缩点输出功率为10.4 d Bm,输入输出匹配良好,芯片面积为1.4 mm×0.8 mm。芯片面积较小,实现了与整个T/R芯片的集成。
An X-band power amplifier（PA）for T/R（transmit/receive）module of active phased array is presented. This PA is designed using cascade topology with linear two-stage single-ended structure. Input and output matching networks are integrated on a chip. A simple linearizer biasing circuit is achieved to reach high gain and linear output power. Based on 0.18 μm Si Ge Bi CMOS 7 WL process technology,the measurement results of the PA show that the small signal gain could reach up to 21.8 d B,and output 1 d B compression point is 10.4 d Bm at 8.5 GHz of power supply 3.3 V. The amplifier is well-matched to deliver the maximum output power,and the total area is only 1.4 mm×0.8 mm,which realizes integration with the T/R chip.
出处
《微波学报》
CSCD
北大核心
2016年第1期82-85,共4页
Journal of Microwaves
基金
国家自然科学重点基金(61331003)
