摘要
采用0.18μm SiGe BiCMOS工艺,设计应用于无线局域网(WLAN)802.11b/g 2.4GHz频段的Class AB射频功率放大器。该放大器采用两级放大结构,具有带温度补偿的线性化偏置电路。仿真结果显示:电路的输入匹配S11小于-13 dB,输出匹配S22小-于20 dB,功率增益达27.3 dB,输出1 dB压缩点为23 dBm,最大功率附加效率(PAE)为21.3%;实现了匹配电路、放大电路和偏置电路的片上全集成,芯片面积为1 148μm×1 140μm。
A 2.4 GHz Class AB RF power amplifier was designed for WLAN 802.11b/g based on 0.18 μm SiGe BiCMOS technology.The RF power amplifier had a two-stage structure with temperature-insensitive linearizing bias circuit.Simulation results showed that the power amplifier had a power gain of 27.3 dB,an output 1 dB compression point of 23 dBm,a maximum power added efficiency（PAE） of 21.3%,an input impedance match S11 and an output impedance match S22 less than-13 dB and-20 dB,respectively.The matching,amplifying and biasing circuits were all integrated on a single chip,which occupied an area of 1 148 μm×1 140 μm.
出处
《微电子学》
CAS
CSCD
北大核心
2010年第4期469-472,476,共5页
Microelectronics
基金
科技部国家科技重大专项资助项目(2009ZX01034-002-002-001)
上海AM基金资助项目(09700713800)
