摘要
采用Cu靶和Al靶直流共溅射法制备了p型透明导电Cu-Al-O薄膜。用原子力显微镜(AFM)、X射线衍射(XRD)仪、四探针测量仪、紫外-可见分光光度计对样品进行了表征。结果表明,对所制备的p型透明导电Cu-Al-O薄膜经高温退火后,其结晶质量和导电性能均有一定提高,薄膜在可见光区的平均透过率接近70%,禁带宽度约为3.75 eV。
p-type transparent conducting Cu-Al-O films were successfully prepared by using direct current （DC） magnetron reactive co-sputtering deposition with Cu and Al metallic targets. The samples were tested by atomic force microscopy （AFM）, X-ray diffraction （XRD）, 4-point probe, UV-VIS spectrophotometer, respectively. The results show that the crystallization and electrical conductivity of the p-type transparent conducting Cu-Al-O films are improved after being annealed at high temperature. The average transmittance of the films in visible region approximates 70%. The forbidden band width of the film is about 3.75 eV.
出处
《半导体光电》
EI
CAS
CSCD
北大核心
2008年第5期684-686,691,共4页
Semiconductor Optoelectronics
基金
国家自然科学基金资助项目(60571043)
