摘要
采用反应磁控溅射工艺通过改变N_2气流量比在Si衬底上沉积300nm厚TiN薄膜。用原子力显微镜(AFM)观察薄膜表面形貌,并根据分形理论予以定量表征。结果表明:TiN薄膜的溅射模式与分形维数D_f值的演化存在相关性。当N_2气流量比由0.0%增加至4.0%时,TiN薄膜的溅射方式属于金属模式,D_f保持不变;当N_2气流量比继续增加至10.0%时,薄膜溅射方式转变为过渡模式,此时D_f急剧减小;而当N_2气流量比超过10.0%以后,薄膜溅射模式改变为氮化物模式,相应的D_f轻微增加。
300 nm-thick TiN thin films were deposited by flow ratios. Film surface morphologies were observed by fractal theory. The correlation between sputtering model reactive magnetron sputtering under different N2 atomic force microscope （AFM） and analyzed by and fractal dimension Df was investigated. With the increase of N2 flow ratio, the sputtering model of TiN film changes from metal model to transition model and to nitride model. Accordingly, Df undergoes the decrease followed by slight increase.
出处
《量子电子学报》
CAS
CSCD
北大核心
2008年第3期346-350,共5页
Chinese Journal of Quantum Electronics
关键词
材料
表面形貌
分形理论
薄膜
materials
surface morphology
fractal theory
thin film
