摘要
本研究以硅片为衬底,热蒸发一氧化硅粉末在较低温度下合成了大量直径均匀的非晶SiO2纳米线。这些纳米线直径分布在15nm^40nm之间,长度几十微米。选区电子衍射(SAED)、能谱(EDS)、电子能量损失谱(EELS)分析结果表明这些纳米线为非晶SiO2纳米线。光致发光(PL)谱测试结果显示纳米线在波长550nm处存在一个较强的PL峰。本文进一步指出了蒸发源SiO粉末的颗粒度和蒸发温度对纳米线生长有强烈的影响。
Large-quantity of amorphous SiO2 nanowires have been synthesized by thermal evaporating SiO powder on a Si substrate at low temperature. These nanowires have diameters ranging from 15 nm to 40 nm and lengths of tens of micrometers. Selected area electron diffraction （SAED）, energy dispersive spectrometry （EDS） and electron energy loss spectrum （EELS） were used to characterize the nanowires. The results show that amorphous silicon dioxide nanowires were obtained. The photoluminescence （PL） characterization spectrum of these nanowires shows a strong peak at 550 nm. Furthermore,this paper has showed that the evaporation temperature and the particle size of the SiO powder have great effect on the growth of the.nanowires.
出处
《电子显微学报》
CAS
CSCD
2008年第2期102-107,共6页
Journal of Chinese Electron Microscopy Society
基金
国家自然科学基金资助项目(No.50272081)
北京市优秀人才培养资助项目(20061D0501500200)~~
