摘要
应变Si/SiGe异质结构通过大剂量Ge离子注入并结合高温快速热退火制备而成。325nm波长的紫外激光被用于调查应变Si盖层的Raman谱特征。实验发现,硅盖层中的张应变导致硅的520cm-1的一级拉曼散射峰向低频方向偏移,峰的偏移程度反映硅盖层中横向张应力的大小约为12.5×108N·m-2。硅盖层中的张应变并未导致1555和2330cm-1的次级拉曼散射峰的变化。
Strained Si/SiGe heterostructure was prepared by high dose Ge ion implantation and a subsequent high temperature rapid thermal processing method. A 325 nm UV laser was used to analyze the Raman spectra of the strained Si cap layer. It was found that tensile strain in the Si cap layer can induce a shift toward lower frequency of the first order Raman scattering peak of 520 cm(-1). In light of the variation of peak position, a lateral tensile stress of 12.5 x 10(8) N(.)m(-2) in Si cap layer was worked out. However, the tensile strain in the Si cap layer can not lead to a variation of the sub-order Raman scattering peaks around 1 555 and 2 330 cm(-1).
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
2005年第5期719-722,共4页
Spectroscopy and Spectral Analysis
基金
北京有色金属研究总院创新基金(C0236687)
